Published January 2003
| Version v1
Journal article
RBS study on GaN implanted with He+, N+
- 1. Beijing Univ., Beijing (China). Dept. of Technical Physics
Description
The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vapor-phase epitaxy. the he+, N+ implantation with different ion energy and post-implantation annealing are investigated. 7-8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 degree C for He+ and N+, respectively. After 600-700 degree C annealing, the resistivity is still very high, and radiation damages is found by RBS/channeling
Additional details
Publishing Information
- Journal Title
- Atomic Energy Science and Technology
- Journal Volume
- 37
- Journal Issue
- 1
- Journal Page Range
- p. 28-30
- ISSN
- 1000-6931
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 35053508
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BACKSCATTERING; CHANNELING; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; HELIUM IONS; ION IMPLANTATION; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; ELASTIC SCATTERING; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SCATTERING