Published November 28, 2008 | Version v1
Journal article

Deep blue phosphorescent organic light-emitting diodes using a Si based wide bandgap host and an Ir dopant with electron withdrawing substituents

  • 1. School of Chemical and Biological engineering, Seoul National University, Shinlim-dong, Kwanak-gu, Seoul, 151-742 (Korea, Republic of)
  • 2. LG Philips LCD, Jinpyung-dong, Gumi-si, Gyungsangbuk-do, 730-726 (Korea, Republic of)
  • 3. Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Kyeonggi-do, 4448-701 (Korea, Republic of)

Description

A deep blue phosphorescent organic light-emitting diode was developed using a diphenyldi(4-(9-carbazoly)lphenyl)silane(SiCa) host material and a tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium(FCNIr) dopant material. Triplet bandgap of the SiCa was 3.0 eV, while triplet bandgap of the FCNIr was 2.8 eV. Light-emitting performances of blue devices were investigated by changing doping concentration of the FCNIr and a pure blue emission with a color coordinate of (0.15, 0.19) could be obtained

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2008.08.156

Additional details

Identifiers

DOI
10.1016/j.tsf.2008.08.156;
PII
S0040-6090(08)00985-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
517
Journal Issue
2
Journal Page Range
p. 722-726
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.