Published February 2011
| Version v1
Journal article
Modified Graphene-like Films as a New Class of Semiconductors with a Variable Energy Gap
- 1. V. Lashkaryov Institute of Semiconductor Physics, Kyiv (Ukraine)
Description
It has been theoretically predicted and experimentally proved that the deformation of thin graphite-like carbon films is accompanied by the appearance of an energy gap at the K-point, the gap being proportional to a strain. A metal-semiconductor phase transition in a thin graphite (or multilayered Graphene) film has been revealed. This phenomenon can be promising for the development of semiconducting materials.
Additional details
Additional titles
- Original title (Ukrainian)
- Modifyikovanyi grafenopodyibnyi plyivki yak novij klas napyivprovyidnikyiv zyi zmyinnoyu shirinoyu zaboronenoyi zonyi
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 56
- Journal Issue
- no.2
- Journal Page Range
- p. 178-182
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 43125832
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON; DEFORMATION; ENERGY GAP; FILMS; GRAPHITE; PHASE TRANSFORMATIONS; RECOMMENDATIONS; ZONES
- Descriptors DEC
- CARBON; ELEMENTS; MINERALS; NONMETALS