Irradiation effect on the current-voltage characteristics of poly-pyrrole/p-Si and poly-pyrrole/n-GaAs structures

Full text: A metallic poly-pyrrole film has been directly formed on a p-type Si and n-type GaAs substrates by using anodization method under conditions of constant current density. To form ohmic contacts to back sides of Si and GaAs semiconductors Al and Au-Ge alloy were used, respectively. The poly-pyrrole/p-Si/Al and poly pyrrole/n-GaAs/Au-Ge semiconductor structures has demonstrated rectifying behavior by the current-voltage curves studied at room temperature. The samples were exposed to X-ray irradiation up to 50 keV at constant doses in order to determine effect of X-ray radiation. It has been shown that the parameters of the structures such as barrier height, ideality factor and raises resistance have not been changed significantly by the irradiation. As a result, the poly-pyrrole/p-Si/Al and poly-pyrrole/n-GaAs/Au-Ge structures can be used as reliable device at different circuit applications