Published March 5, 1973
| Version v1
Journal article
Study of semiconductor paramagnetism on the basis of luminescence polarization in a weak magnetic field
- 1. AN SSSR, Moscow. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Исследование парамагнетизма полупроводников по поляризации люминесценции в слабом магнитном поле
Publishing Information
- Journal Title
- Zh. Ehksp. Teor. Fiz., Pis'ma - Red.
- Journal Volume
- 17
- Journal Issue
- 5
- Series
- Zh. Ehksp. Teor. Fiz., Pis'ma - Red.
- Journal Page Range
- 244-247
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4083553
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ARSENIDES; CRYSTAL DOPING; CRYSTALS; DIAGRAMS; GALLIUM ALLOYS; INTERMETALLIC COMPOUNDS; MAGNETIC FIELDS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PARAMAGNETISM; PHOTOLUMINESCENCE; QUANTITY RATIO; RECOMBINATION
- Descriptors DEC
- ALLOYS; LUMINESCENCE; MAGNETISM; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- Letter-to-the-editor. For English translation see the journal JETP Lett.