Published May 1989 | Version v1
Journal article

Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85-600 keV

  • 1. Shandong Univ., Jinan (China). Dept. of Physics
  • 2. Academia Sinica, Beijing (China). Inst. of Physics

Description

The RBS technique and 19F(p, αγ)16O resonance nuclear reaction at 872.1 keV, with Γ=4.2 keV, were used to measure the depth profiles of implanted 79Br, 132Xe and 19F in silicon samples. A special convolution procedure was used to extract the depth profiles from the RBS spectra and the experimental excitation yield curves. The range parameters, Rp and ΔRp obtained in this experiment were compared with theoretical calculations. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research, Section B
Journal Volume
42
Journal Issue
1
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
1-6
ISSN
0168-583X
CODEN
NIMBE