Published 1989 | Version v1
Miscellaneous Metadata-only

Study of the near surface damage in silicon created by P2+ and P+ implantation

Creators

  • 1. Academia Sinica, Shanghai SH (China). Shanghai Inst. of Metallurgy
  • 2. Royal Melbourne Inst. of Tech. (Australia). Microelectronics and Materials Technology Centre

Description

The difference in the damage structure of silicon bombarded by P+ and P2+ was observed in the near surface region where the two fragments of P2+ can be considered to travel together. In both cases an amorphous layer was formed. The epitaxial regrowth behaviour during subsequent annealing was studied by time-resolved reflectivity and reflection high energy electron diffraction. The results shown that the multiple collision effect could be responsible for the removal of the crystalline island seen for atomic ion implantation. 4 refs., 3 figs

Part of:
Sixth Australian conference on nuclear techniques of analysis: proceedings

Additional details

Publishing Information

Publisher
AINSE.
Imprint Place
Lucas Heights (Australia)
Imprint Title
Sixth Australian conference on nuclear techniques of analysis: proceedings
Imprint Pagination
240 p.
Journal Page Range
p. 150-152.
Report number
INIS-mf--12680

Conference

Title
6. Australian conference on nuclear techniques of analysis.
Dates
8-10 Nov 1989.
Place
Lucas Heights (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
21070756
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ATOM-MOLECULE COLLISIONS; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRON DIFFRACTION; EPITAXY; ION IMPLANTATION; MOLECULAR IONS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; REFLECTION; RUTHERFORD SCATTERING; SILICON; SUBSTRATES
Descriptors DEC
ATOM COLLISIONS; ATOMIC IONS; CHARGED PARTICLES; COHERENT SCATTERING; COLLISIONS; DIFFRACTION; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; IONS; MOLECULE COLLISIONS; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SCATTERING; SEMIMETALS

Optional Information