Published June 1992
| Version v1
Journal article
Post irradiation effects (PIE) in integrated circuits
- 1. Jet Propulsion Lab., California Inst. of Technology, Pasadena, CA (United States)
- 2. Sandia National Lab., Albuquerque, NM (United States)
Description
Post Irradiation Effects (PIE) ranging from normal recovery catastrophic failure have been observed in integrated circuits during the PIE period. These variations indicate that a rebound or PIE recipe used for radiation hardness assurance must be chosen with care. In this paper, the authors provide examples of PIE in a variety of integrated circuits of importance to spacecraft electronics
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 39
- Journal Issue
- 3
- Journal Page Range
- p. 328-341.
- ISSN
- 0018-9499
- CODEN
- IETNAE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24002684
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Descriptors DEI
- FAILURES; INTEGRATED CIRCUITS; RADIATION EFFECTS; RADIATION HARDENING; SPACE VEHICLES; VARIATIONS
- Descriptors DEC
- ELECTRONIC CIRCUITS; HARDENING; PHYSICAL RADIATION EFFECTS