Published September 2016 | Version v1
Journal article Metadata-only

Effect of tunnel-spin polarization on spin accumulation in n-type Ge(001)/MgO/Co40Fe40B20

Creators

  • 1. Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

Description

We found that a huge enhancement of electrical spin accumulation in n-type Ge(001) with the MgO/Co40Fe40B20 (CFB) spin-tunnel contact (STC) is realized by postannealing. The spin-resistance–area product (RsA) of this STC on n-type Ge after postannealing at 350°C (1.97 × 106 Ω·µm2) is nearly one order of magnitude larger than that of the as-deposited one (2.34 × 105 Ω·µm2). The dependence of RsA on contact resistance, a scaling property, is also greatly modulated after postannealing. The epitaxial growth of CFB on an MgO(001) template and the consequent TSP improvement are responsible for such changes. (author)

Availability note (English)

Available from http://dx.doi.org/10.7567/JJAP.55.090303

Additional details

Identifiers

DOI
10.7567/JJAP.55.090303;

Publishing Information

Journal Title
Japanese Journal of Applied Physics
Journal Volume
55
Journal Issue
9
Journal Page Range
p. 090303.1-090303.4
ISSN
0021-4922

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
48051275
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BLOCH THEORY; CHARGE TRANSPORT; ELECTRON DIFFRACTION; EPITAXY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FOURIER TRANSFORMATION; GERMANIUM; MAGNESIUM OXIDES; POLARIZATION; POTENTIALS; SEMICONDUCTOR MATERIALS; SPIN; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; INTEGRAL TRANSFORMATIONS; MAGNESIUM COMPOUNDS; MAGNETIC MATERIALS; MAGNETISM; MATERIALS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; SCATTERING; TRANSFORMATIONS

Optional Information

Notes
33 refs., 4 figs., 1 tab.