Published 2003 | Version v1
Miscellaneous Open

Comparative analysis of effect of hydrogen implantation and ion-plasma treatment on defect generation in silicon

Creators

  • 1. NANB, Inst. Fiziki Tverdogo Tela i Poluprovodnikov, Minsk (Belarus)

Description

no abstract available

Files

36016304.pdf

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Part of:
Abstracts of reports of the 33. International conference on physics of charged particle - crystal interaction

Additional details

Additional titles

Original title (Russian)
Сравнительный анализ влияния имплантации водорода и ионно-плазменной обработки на процессы дефектообразования в кремнии

Publishing Information

Publisher
Izdatel'stvo UNTs DO
Imprint Place
Moscow (Russian Federation)
Imprint Title
Abstracts of reports of the 33. International conference on physics of charged particle - crystal interaction
Imprint Pagination
162 p.
Journal Page Range
p. 129
Report number
INIS-RU--484

Conference

Title
33. International conference on physics of charged particle - crystal interaction
Original Conference Title
33. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
26-28 May 2003
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
36016304
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
DISLOCATIONS; HYDROGEN IONS; ION IMPLANTATION; KEV RANGE 10-100; MONOCRYSTALS; PLASMA ARC SPRAYING; SILICON; SURFACE TREATMENTS; TEMPERATURE RANGE 1000-4000 K
Descriptors DEC
CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DEPOSITION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; LINE DEFECTS; SEMIMETALS; SPRAY COATING; SURFACE COATING; TEMPERATURE RANGE

Optional Information

Notes
3 refs. Imprint:Tezisy dokladov 33. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami