Published March 1995
| Version v1
Journal article
To the question of the formation of structural defects due to the stopping of fast ions in silicon
- 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.
Description
High-purity n-Si with specific resistivity (2-6.6) kOhm x cm was irradiated by 5.48 MeV α particles of 238Pu and 80 MeV fission fragments of 252Cf with low doses. Using mathematical simulation of cascade collisions with Si lattice atoms the peculiarities of Frenkel pair generation are considered in the case of light (α particles) and heavy (fission fragments) ions. Deep levels arising in the forbidden zone of Si were studied by the DLTS method. 9 refs., 2 figs., 1 tab
Additional details
Additional titles
- Original title (Russian)
- К вопросу об образовании дефектов структуры при торможении быстрых ионов в кремнии
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 3
- Journal Page Range
- p. 543-552.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26078936
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALPHA PARTICLES; ENERGY LEVELS; FRENKEL DEFECTS; MEV RANGE 01-10; MEV RANGE 10-100; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RECOMBINATION; SILICON; SIMULATION
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HELIUM IONS; IONIZING RADIATIONS; IONS; MATERIALS; MEV RANGE; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES