Published December 2010 | Version v1
Journal article

Study of carrier doping across the parent Mott insulator La2CuO4

  • 1. Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196 (Japan)

Description

Ce substituted La2CuO4 single crystals are investigated to try doping electrons into the parent Mott insulator. Transport properties of slightly Ce substituted La2CuO4 show that carriers are still holes activated from an impurity level of which activation energy is the same as the parent La2CuO4.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physc.2010.02.094

Additional details

Identifiers

DOI
10.1016/j.physc.2010.02.094;
PII
S0921-4534(10)00201-7;

Publishing Information

Journal Title
Physica. C, Superconductivity
Journal Volume
470
Journal Issue
Suppl.1
Journal Page Range
p. S49-S50
ISSN
0921-4534
CODEN
PHYCE6

Conference

Title
9. international conference on materials and mechanisms of superconductivity
Dates
7-12 Sep 2009
Place
Tokyo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068985
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACTIVATION ENERGY; CARRIERS; CERIUM ADDITIONS; CUPRATES; ELECTRONS; HOLES; IMPURITIES; LANTHANUM COMPOUNDS; MONOCRYSTALS
Descriptors DEC
ALLOYS; CERIUM ALLOYS; COPPER COMPOUNDS; CRYSTALS; ELEMENTARY PARTICLES; ENERGY; FERMIONS; LEPTONS; OXYGEN COMPOUNDS; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; RARE EARTH COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.