Published September 2005 | Version v1
Journal article

TEM characterization of La/B4C multilayer systems by the geometric phase method

  • 1. Microanalysis of Materials, Faculty of Engineering, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143 Kiel (Germany)
  • 2. Now at: Faculty of Science and Technology, University of Twente, Enschede (Netherlands)
  • 3. Institute of Materials Research, GKSS Forschungszentrum Geesthacht GmbH, Max-Planck-Strasse 1, 21505 Geesthacht (Germany)
  • 4. Fraunhofer Institute for Silicon Technology, Fraunhoferstrasse 1, 25524 Itzehoe (Germany)

Description

New La/B4C multilayer systems with layer thicknesses in the nanometer range have been deposited onto structured silicon (001) surfaces by magnetron sputtering and have been characterized by transmission electron microscopy (TEM). By applying a geometric phase method which has been originally developed for measuring displacement fields from high-resolution TEM images, we demonstrate that the structural perfection of multilayers, especially their local layer periods and local layer orientations, can be analyzed with high sensitivity from bright-field TEM images of cross-section specimens. The determination of these structure parameters is relevant for the assessment of the reflectivity properties of such multilayer systems in advanced X-ray optical components. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200521039

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applied Research
Journal Volume
202
Journal Issue
12
Journal Page Range
p. 2299-2308
ISSN
0031-8965
CODEN
PSSABA

INIS

Optional Information

Notes
With 10 figs., 10 refs.. SICI: 0031-8965(200509)202:12<2299::AID-PSSA200521039>3.0.TX;2-S