Published October 1974
| Version v1
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Transmission electron microscopy study of defects in ion implanted silicon and annealing
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Files
6186170.pdf
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Additional details
Additional titles
- Original title (French)
- Contribution a l'etude par microscopie electronique en transmission des defauts crees par implantation ionique dans le silicium et de leur recuit
Publishing Information
- Imprint Pagination
- 99 p.
- Report number
- CEA-R--4595
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 6186170
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ANNEALING; ARSENIC IONS; BORON IONS; CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRON MICROSCOPY; INTEGRATED CIRCUITS; ION BEAMS; ION IMPLANTATION; PHOSPHORUS IONS; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRONIC CIRCUITS; ELEMENTS; HEAT TREATMENTS; IONS; MICROSCOPY; SEMIMETALS