Published September 1, 2010 | Version v1
Journal article Metadata-only

Control of the lateral growth morphology in GaAs Droplet Epitaxy

Creators

  • 1. LNESS and Dipartimento di Scienza dei Materiali dell'Universita di Milano-Bicocca, via Cozzi 53, 20125 Milano (Italy)
  • 2. CNISM, LNESS and Dipartimento di Fisica del Politecnico di Milano, via Anzani 42, 22100 Como (Italy)

Description

We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/245/1/012082

Additional details

Identifiers

DOI
10.1088/1742-6596/245/1/012082;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
245
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
6. international conference on quantum dots
Acronym
QD2010 (Quantum Dots 2010)
Dates
26-30 Apr 2010
Place
Nottingham (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42051193
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CONTROL; CRYSTAL GROWTH; CRYSTALLIZATION; CYLINDRICAL CONFIGURATION; EPITAXY; GALLIUM ARSENIDES; NANOSTRUCTURES; RINGS; SYMMETRY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CONFIGURATION; CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES