Published May 2, 2009 | Version v1
Journal article

Modeling Etching Plasmas: Needs and Challenges in Atomic and Molecular Data

  • 1. Groupe de physique des plasmas, Universite de Montreal, C.P. 6128, Succ. Centre-ville, Montreal, Quebec, H3C 3J7 (Canada)
  • 2. INRS-Energie, Materiaux et Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Quebec, J3X 1S2 (Canada)

Description

This paper reviews works of the team to characterize and model chlorine high-density plasmas. The model allows in particular determining the pressure-dependence of the concentration of neutral and charged species. Comparison of this model to experimental measurements achieved in high-density surface-wave-produced plasmas shows an excellent agreement for the neutral atomic and molecular species. As far as charged species are concerned, the model reproduces well experiments for atomic chlorine ions and electrons, but some discrepancy occurs for molecular positive ions and negative ions at low pressure. The cause of this discrepancy remains to be clarified but might result from an underestimation of the creation rates of Cl2+ and Cl-. The model seems promising for predicting the ion density in a recently installed ICP reactor.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1125
Journal Issue
1
Journal Page Range
p. 166-175
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
6. international conference on molecular data and their applications
Acronym
ICAMDATA-2008
Dates
27-31 Oct 2008
Place
Beijing (China)

Optional Information

Notes
(c) 2009 American Institute of Physics