Effects of high-temperature anneals and 60Co gamma-ray irradiation on strained silicon on insulator
Creators
- Park, K.1, 2, 3, 4, 5, 6, 7, 8
- Canonico, M.1, 2, 3, 4, 5, 6, 7, 8
- Celler, G. K.1, 2, 3, 4, 5, 6, 7, 8
- Seacrist, M.1, 2, 3, 4, 5, 6, 7, 8
- Chan, J.1, 2, 3, 4, 5, 6, 7, 8
- Gelpey, J.1, 2, 3, 4, 5, 6, 7, 8
- Holbert, K. E.1, 2, 3, 4, 5, 6, 7, 8
- Nakagawa, S.1, 2, 3, 4, 5, 6, 7, 8
- Tajima, M.1, 2, 3, 4, 5, 6, 7, 8
- Schroder, D. K.1, 2, 3, 4, 5, 6, 7, 8
- 1. Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287 (United States)
- 2. Institute of Space and Astronautical Science/JAXA, Sagamihara, Kanagawa 229-8510 (Japan)
- 3. Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
- 4. Mattson Technology Canada, Vancouver, British Columbia V6P 6T7 (Canada)
- 5. MEMC Electronic Materials, Inc., St. Peters, Missouri 63376 (United States)
- 6. Soitec USA, Peabody, Massachusetts 01960 (United States)
- 7. Freescale Semiconductor, Inc., Tempe, Arizona 85284 (United States)
- 8. School of Materials, Department of Electrical Engineering, and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287 (United States)
Description
Strained silicon on insulator was exposed to high-temperature annealing and high-dose 60Co gamma (γ)-ray irradiation to study the tenacity of the bond between the strained Si film and the underlying buried oxide. During the high-temperature anneals, the samples were ramped at a rate of 150 deg. C/s to 850 deg. C then ramped to 1200, 1250, and 1300 deg. C at a rate of approximately 5x105 deg. C/s for millisecond duration anneals. For the irradiation experiments, the samples were irradiated with 60Co γ rays to a dose of 51.5 kGy. All samples were characterized by ultraviolet (UV) Raman, pseudo metal-oxide-semiconductor field-effect transistor (Ψ-MOSFET) current voltage, Hall mobility, and photoluminescence (PL) to verify changes in strain. UV Raman, PL, and Ψ-MOSFET measurements show no strain relaxation for the high-temperature annealed samples and only very slight relaxation for the γ-ray irradiated samples
Additional details
Identifiers
- DOI
- 10.1063/1.2787167;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 102
- Journal Issue
- 7
- Journal Page Range
- p. 074507-074507.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39076959
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARRIER MOBILITY; COBALT 60; ELECTRIC POTENTIAL; FILMS; GAMMA RADIATION; HALL EFFECT; IRRADIATION; MOSFET; OXIDES; PHOTOLUMINESCENCE; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 1000-4000 K; ULTRAVIOLET RADIATION
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; LUMINESCENCE; MATERIALS; MINUTES LIVING RADIOISOTOPES; MOBILITY; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SEMIMETALS; SPECTRA; TEMPERATURE RANGE; TRANSISTORS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- (c) 2007 American Institute of Physics