Published September 2003 | Version v1
Journal article

Heat expansion and electrooptic absorption of laminated semiconductors TLGaS2xSe2(1-x) (x=0,4; 0,6; 0,8)

  • 1. Sumqayit State University of Azerbaijan, Baku (Azerbaijan)

Description

Full text:The temperature relation of heat expansion and change of absorption spectrums under effect of an electrical field of laminated semiconductors TIGaS2xSe2(1-x)T It is revealed, that phase change in peters at replacement of atoms of a selenium by atoms of sulfur in. Is rotined, that there is a staright line a cerrallation between width of a forbidden region and coefficient of thermal expansion depending on a structure, width of a forbidden region and coefficients of thermal expansion is augmented, that is bound by change of a chemical bond between atoms in crystal lattice

Availability note (English)

Available in abstract form only, full text entered in this record

Additional details

Additional titles

Original title (Azerbaijani)
TLGaS2xSe2(1-x) (x=0,4; 0,6; 0,8) layli yarimkechiricilerinin istide genishlenmesi ve elektrooptik udulmasi

Publishing Information

Journal Title
Scientific News. Natural and Technical Sciences
Journal Volume
6
Journal Issue
4
Journal Page Range
4 p.
ISSN
1680-1245

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
43128058
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
ABSORPTION; CHEMICAL BONDS; CRYSTAL LATTICES; MAGNETIC SEMICONDUCTORS; SELENIUM; SULFUR; THERMAL EXPANSION
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; EXPANSION; MATERIALS; NONMETALS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SORPTION

Optional Information

Notes
Translated from Azerbaijani