Published August 15, 1972 | Version v1
Journal article

Electronic band structure and optical properties of 3C--SiC, BP, and BN

Description

The energy band structure and optical properties of the zinc-blende semiconductors $3C$-SiC, BP, and BN have been calculated using a nonlocal version of the empirical-pseudopotential method. The results of this investigation are discussed and compared to experiment. The agreement between theory and experiment is found to be very good for both SiC and BP. The BN results are quite rough, owing to some very questionable assumptions made necessary because of the scarcity of experimental data. However, the results seem to give a reasonable first approximation to the correct band structure. The effect of the nonlocal $p$ pseudopotential on these three crystals is discussed.

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review B
Journal Volume
6
Journal Issue
4
Series
Phys. Rev., B.
Journal Page Range
1464-1480
ISSN
0556-2805

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
4039375
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BAND THEORY; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; SILICON CARBIDES
Descriptors DEC
CARBIDES; PHYSICAL PROPERTIES; SILICON COMPOUNDS

Optional Information

Notes
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