Physical properties of ion-implanted semiconductor layers

Ion implantation is a technique for modifying an extremely wide range of near-surface physical properties of solids by directing a beam of energetic ions at the solid. It is widely used in the controlled doping of semiconductors and it offers a number of advantages over other methods, though the elementary processes of implantation are complicated. The interactions between penetrating ions and electrons and atoms in the lattice are discussed, considering especially energy transfer, stopping, range, and ion depth distribution. A qualitative interpretation is given of both the embedding and annealing processes and the electrical properties appearing macroscopically. Furthermore, the application of ion implantation is described for the fabrication of MOS structures, of higher-value resistors used in integrated circuits, and of special diodes