Published September 15, 2014
| Version v1
Journal article
Quantum transport of the semiconductor pump: Due to an axial external field
- 1. College of Electrical and Information Engineering, Hunan University of Arts and Science, Changde 415000 (China)
- 2. Department of Physics, South China University of Technology, Guangzhou 510640 (China)
Description
Parametric semiconductor pump modulated by the external field is investigated. The pump center attaching to two normal leads is driven by the potentials formed in the interfaces. With the Floquet scattering matrix method, the pumped currents modulated by the parameters are studied. Results reveal that the charge and spin currents pumped from the system can be strengthen by the external field besides the potentials. Directed spin currents can be pumped more strongly than the charge currents, and even the pure spin currents can be achieved in some external field couplings to the pump parameters
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2014.04.082Additional details
Identifiers
- DOI
- 10.1016/j.physb.2014.04.082;
- PII
- S0921-4526(14)00391-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 449
- Journal Page Range
- p. 42-46
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46118052
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COUPLINGS; CURRENTS; INTERFACES; POTENTIALS; PUMPS; SCATTERING; SEMICONDUCTOR MATERIALS; SPIN; TRANSPORT THEORY
- Descriptors DEC
- ANGULAR MOMENTUM; EQUIPMENT; MATERIALS; PARTICLE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.