Published September 15, 2014 | Version v1
Journal article

Quantum transport of the semiconductor pump: Due to an axial external field

  • 1. College of Electrical and Information Engineering, Hunan University of Arts and Science, Changde 415000 (China)
  • 2. Department of Physics, South China University of Technology, Guangzhou 510640 (China)

Description

Parametric semiconductor pump modulated by the external field is investigated. The pump center attaching to two normal leads is driven by the potentials formed in the interfaces. With the Floquet scattering matrix method, the pumped currents modulated by the parameters are studied. Results reveal that the charge and spin currents pumped from the system can be strengthen by the external field besides the potentials. Directed spin currents can be pumped more strongly than the charge currents, and even the pure spin currents can be achieved in some external field couplings to the pump parameters

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2014.04.082

Additional details

Identifiers

DOI
10.1016/j.physb.2014.04.082;
PII
S0921-4526(14)00391-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
449
Journal Page Range
p. 42-46
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46118052
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COUPLINGS; CURRENTS; INTERFACES; POTENTIALS; PUMPS; SCATTERING; SEMICONDUCTOR MATERIALS; SPIN; TRANSPORT THEORY
Descriptors DEC
ANGULAR MOMENTUM; EQUIPMENT; MATERIALS; PARTICLE PROPERTIES

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.