Published September 1, 2010 | Version v1
Journal article

μ-PL characterization of CdSe Quantum Dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier

  • 1. David Brewster Building, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH 14 4AS (United Kingdom)

Description

In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K μ-PL. The dot density was estimated to be approximately 1010 cm-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (∼200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/245/1/012085

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
245
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
6. international conference on quantum dots
Acronym
QD2010 (Quantum Dots 2010)
Dates
26-30 Apr 2010
Place
Nottingham (United Kingdom)