Published December 2002 | Version v1
Journal article Metadata-only

Deep levels in the band gap of GaN layers irradiated with protons

Creators

  • 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
  • 2. St. Petersburg State Polytechnical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251 (Russian Federation)

Description

Deep-level transient spectroscopy was used to study the parameters of deep levels in the band gap of epitaxial n-GaN layers after irradiaton of the Schottky barriers with 1-MeV protons to a dose of 1012 cm-2. A deep level EP1 with an activation energy of 0.085 eV was introduced by irradiation into the upper half of the GaN band gap. The introduction rate of the corresponding defect was found to depend on the bias voltage applied to the Schottky barrier during irradiation

Additional details

Identifiers

DOI
10.1134/1.1529245;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
12
Journal Page Range
p. 1352-1354
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051955
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; EXPERIMENTAL DATA; GALLIUM NITRIDES; LAYERS; MEV RANGE 01-10; MILLI EV RANGE; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SCHOTTKY EFFECT
Descriptors DEC
BEAMS; DATA; ENERGY; ENERGY RANGE; GALLIUM COMPOUNDS; INFORMATION; MEV RANGE; NITRIDES; NITROGEN COMPOUNDS; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; PNICTIDES; RADIATION EFFECTS; SPECTROSCOPY

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1437-1439 (No. 12, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.