Published June 1985
| Version v1
Journal article
Temperature dependence of stationary photocurrent in silinite type doped crystals
- 1. Tomskij Inst. Avtomatizirovannykh Sistem Upravleniya i Radioehlektroniki (USSR)
Description
In the 80-300 K range the temperature dependence of photocurerent of silinite type doped crystals (Bi12GeO20, V2O5, Ga2O3) is investigated. In the low temperature range the photocurrent thermactivation has been observed, whereas in the high temperature range-temperature quenching. In a number of samples no temperature quenching portion was noted. The results are explained in the framework of a recombination multilevel model in the presence Of both slow and fast recombination centers and trapping levels
Additional details
Additional titles
- Original title (Russian)
- Температурная зависимост' стационарного фототока в легированных кристаллах типа силленита
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 28
- Journal Issue
- 6
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 85-89
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17024528
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH GERMANATES; ENERGY LEVELS; GALLIUM OXIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; MONOCRYSTALS; PHOTOELECTRIC EFFECT; RECOMBINATION; TEMPERATURE DEPENDENCE; VANADIUM OXIDES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; GALLIUM COMPOUNDS; GERMANATES; GERMANIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Soviet Physics Journal (USA).