Published 2008 | Version v1
Miscellaneous

Method of measuring the thickness of the semiconductor silicon detectors

  • 1. Institute of Nuclear Physics, Tashkent (Uzbekistan)

Description

no abstract available

Availability note (English)

Available from ILO Turkey
Part of:
Book of abstracts

Additional details

Publishing Information

Imprint Title
Book of abstracts
Imprint Pagination
302 p.
Journal Page Range
p. 37
Report number
INIS-TR--0120

Conference

Title
5. Eurasian Conference on Nuclear Science and its Application
Dates
14-17 Oct 2008
Place
Ankara (Turkey)

INIS

Country of Publication
Turkey
Country of Input or Organization
Turkey
INIS RN
39120773
Subject category
S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract, Conference, Numerical Data, Non-conventional Literature
Descriptors DEI
CHARGED PARTICLES; COMPTON WAVELENGTH; LI-DRIFTED SI DETECTORS; MEASURING METHODS; NUCLEAR PHYSICS; NUMERICAL DATA; THICKNESS
Descriptors DEC
DATA; DIMENSIONS; INFORMATION; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; PHYSICS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS

Optional Information