Determination of mismatching of unit-cell parameters in semiconductor heterostructures by the wide-divergent X-ray beam method

A simple X-ray method of determination of mismatching of crystal lattice parameters (CLP) Δd/d of contacting materials of a heterojunction is proposed. The method is based on utilization of the scheme of reverse reflection of a wide-divergent beam and determination of the diffraction lines (DL) from several heterostructure layers at a time. The method can be simply realized, principally, on any electron-probe device. The Δd/d values of CLP mismatching are measured on InAssub(1-x)Sbsub(x)-InAs, Gasub(approximately 0.5)Insub(approximately 0.5)P-GaAs, Gasub(1-x)Insub(x)Psub(1-y)Sbsub(y)-GaAs, Gasub(1-x)Insub(x)Assub(1-y)Psub(y)-InP heterostructures. The absolute error is defined by the measurement accuracy of the distances between DL in the radiogram and attains 3x10-5