Published July 2007 | Version v1
Journal article Metadata-only

1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures

Creators

  • 1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  • 2. Voronezh State University (Russian Federation)
  • 3. Sigm Plus (Russian Federation)

Description

The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser heterostructures emitting at the wavelength 1.75-1.8 μm are fabricated by metal-organic chemical vapor deposition. Based on the heterostructures grown, high-power multimode laser diodes of the mesa-strip design with the maximum emission power 2.0 W in the continuous mode at room temperature and 20 W in the pulsed operation mode are fabricated. The internal optical losses in the lasers were reduced to 2.2 cm-1

Additional details

Identifiers

DOI
10.1134/S1063782607070147;

Publishing Information

Journal Title
Semiconductors
Journal Volume
41
Journal Issue
7
Journal Page Range
p. 860-864
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39098098
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ALLOYS; ARSENIC ALLOYS; CHEMICAL VAPOR DEPOSITION; GALLIUM ALLOYS; INDIUM ALLOYS; INDIUM PHOSPHIDES; ORGANOMETALLIC COMPOUNDS; SEMICONDUCTOR LASERS; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ALLOYS; CHEMICAL COATING; DEPOSITION; INDIUM COMPOUNDS; LASERS; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE COATING; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2007 Pleiades Publishing, Ltd.