Published June 14, 1989
| Version v1
Journal article
A simple method of estimating the effective fast-neutron dose in neutron-transmutation-doped silicon
Description
A simple method for estimation of the effective fast-neutron dose received by the crystalline silicon during neutron transmutation doping process has been proposed. It applies standard optical absorption measurements in the near-infrared range at room temperature, taking into account the dependence of the divacancy-related absorption peak versus fast-neutron fluence. (author)
Additional details
Publishing Information
- Journal Title
- Journal of Physics, D (London). Applied Physics
- Journal Volume
- 22
- Journal Issue
- 6
- Series
- J. Phys., D.
- Journal Page Range
- 861-863
- ISSN
- 0022-3727
- CODEN
- JPAPB
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 20068060
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; CRYSTAL DOPING; DOPED MATERIALS; DOSE-RESPONSE RELATIONSHIPS; FAST NEUTRONS; INFRARED SPECTRA; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; NEUTRON FLUENCE; PHOSPHORUS ADDITIONS; RADIATION DOSES; SILICON
- Descriptors DEC
- BARYONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; MATERIALS; NEUTRONS; NUCLEONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA
Optional Information
- Contract/Grant/Project number
- Contract CPBP 01.04