Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Recent progress on light-emitting diode having a Eu-doped GaN active layer is reported. Although the first success on LED using GaN:Eu has been achieved by OMVPE, the factors to be controlled during the crystal growth are not well understood. We found that GaN:Eu co-doped with Mg in NH3-MBE shows a Eu site which is excited only by the above band-gap excitation. The luminescence intensity is enhanced at least 10 times than that without Mg co-doping. The LED operation fabricated using Mg co-doping technique is successfully demonstrated.