Published March 2011 | Version v1
Journal article Metadata-only

Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots

Creators

  • 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 2. The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  • 3. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

We report the fabrication of intermediate-band solar cells (IBSCs) based on quantum dots (QDs), which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer. Compared with conventional GaAs single-junction solar cells, the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. The results have important applications for realizing high efficiency solar cells with stronger radiation hardness. (cross-disciplinary physics and related areas of science and technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/28/3/038401

Additional details

Identifiers

DOI
10.1088/0256-307X/28/3/038401;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
28
Journal Issue
3
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45002968
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
COMPARATIVE EVALUATIONS; EFFICIENCY; ELECTRIC CURRENTS; FABRICATION; GALLIUM ARSENIDES; HARDNESS; INDIUM ARSENIDES; INTERFACES; LAYERS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTUM DOTS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DIRECT ENERGY CONVERTERS; EQUIPMENT; EVALUATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; NANOSTRUCTURES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SEMICONDUCTOR MATERIALS; SOLAR EQUIPMENT