Published 1998
| Version v1
Miscellaneous
Polarity related problems in growth of GaN homoepitaxial layers
- 1. High Pressure Research Center, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Imprint Pagination
- 175 p.
- Journal Page Range
- p. 43
Conference
- Title
- 27. International School on Physics of Semiconducting Compounds Jaszowiec '98
- Dates
- 7-12 Jun 1998
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31013674
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM NITRIDES; HALL EFFECT; MEETINGS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DEPOSITION; DIFFRACTION; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SURFACE COATING