Published July 15, 2015 | Version v1
Journal article

Na distribution in Cu(In,Ga)Se2 thin films: Investigation by atom probe tomography

  • 1. Institut des Materiaux Jean Rouxel (IMN), UMR 6502 CNRS, 2 rue de la Houssiniere BP 32229, 44322 Nantes Cedex 3 (France)
  • 2. Groupe de Physique des Materiaux (GPM), UMR 6634 CNRS, Université et INSA de Rouen, Avenue de l'Universite BP 12, 76801 Saint Etienne du Rouvray (France)

Description

Atom probe tomography (APT) has been used to study the distribution of Na atoms in polycrystalline Cu(In,Ga)Se2 (CIGSe) thin films. APT, which allows separate investigations of grain boundaries and grain interiors chemistry, shows the presence of inter- and intra-granular Na segregations. It is highlighted that these segregations are found associated to Cu-depletion and In-enrichment. The segregation of Na to crystalline point defects and extended ones is finally discussed regarding its impact on the electrical properties of CIGSe layers

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2015.03.028

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2015.03.028;
PII
S1359-6462(15)00149-9;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
104
Journal Page Range
p. 83-86
ISSN
1359-6462
CODEN
SCMAF7

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.