Published March 10, 2008
| Version v1
Journal article
A study of Al1-xInxN growth by reflection high-energy electron diffraction--incorporation of cation atoms during molecular-beam epitaxy
Creators
- 1. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
Description
Molecular-beam epitaxy of Al1-xInxN alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 deg. C
Additional details
Identifiers
- DOI
- 10.1063/1.2894191;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 92
- Journal Issue
- 10
- Journal Page Range
- p. 101902-101902.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40003092
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; CATIONS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; INDIUM ALLOYS; INDIUM NITRIDES; LATTICE PARAMETERS; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN ADDITIONS; OSCILLATIONS; REFLECTION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; IONS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2008 American Institute of Physics