Published March 30, 2011 | Version v1
Journal article

Current-Voltage Characteristics of Bi-dithiolbenzene in Parallel Arrangement

  • 1. Department of Computer and Communication Technolgy, Faculty of Information and communication, Technology, University Tunku Abdul Rahman, Jalan University, Bandar Barat, 31900 Kampar, Perak (Malaysia)

Description

The low voltage conductance of interacting two 1,4-dithiolbenzene (DTB) molecules is investigated. The simulation results show that the electron transport can be controlled either by changing the Fermi level position Ef or modifying its inter-molecular spacing d. Molecular assembly system with close interaction between DTB units, affects significantly the conductance. In addition, the position of the Fermi plays an important role in determining the current flow. Moreover, it is important to note that Ef affects not only the threshold voltage Vth, but also the saturation voltage Vsat. When Ef approaches the LUMO energy level, Vth decreases, while Vsat increases. To conclude, the threshold voltage and the saturation voltage depend on the Fermi level position and the inter-molecular spacing.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1328
Journal Issue
1
Journal Page Range
p. 91-94
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
Malaysia annual physics conference 2010
Acronym
PERFIK-2010
Dates
27-30 Oct 2010
Place
Damai Laut (Malaysia)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42103308
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BISMUTH COMPOUNDS; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; FERMI LEVEL; INTERACTIONS; MOLECULES; ORGANIC COMPOUNDS; SATURATION; SIMULATION
Descriptors DEC
CALCULATION METHODS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY LEVELS; FERMIONS; LEPTONS; PHYSICAL PROPERTIES; VARIATIONAL METHODS

Optional Information

Notes
(c) 2011 American Institute of Physics