Published April 1, 2008 | Version v1
Journal article

Using AG theory to model a S/I/N tunnel junction

  • 1. Department of Physics, Texas A and M University, College Station, TX 77843-4242 (United States)
  • 2. Department of Physics, University of California, Berkeley, CA 94720-7300 (United States)

Description

We have measured the spin polarized tunneling conductance of a thin Al/Al2O3/amorphous GdxSi1-x planar tunnel junction at T=25 mK in parallel magnetic field H≤3.0 T. Abrikosov-Gorkov theory is a better model for the thin superconducting Al electrode than previously used Bardeen-Cooper-Schrieffer theory. As the magnetic field is increased, we find the best fit to the data by modelling a transition from a superconductor with gap (α<1) to a gapless superconductor (α>1)

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2007.10.315

Additional details

Identifiers

DOI
10.1016/j.physb.2007.10.315;
PII
S0921-4526(07)01138-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
403
Journal Issue
5-9
Journal Page Range
p. 1321-1322
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
International conference on strongly correlated electron systems
Acronym
SCES'07
Dates
13-18 May 2007
Place
Houston, TX (United States)

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.