Published April 28, 2006 | Version v1
Journal article

High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

  • 1. Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon (Portugal) and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica (Portugal)
  • 2. CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica (Portugal)
  • 3. Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon (Portugal)

Description

In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 x 10-4 Ω cm with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.07.311;
PII
S0040-6090(05)01118-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
502
Journal Issue
1-2
Journal Page Range
p. 104-107
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
5. international conference on coatings on glass and plastics for large-area or high-volume products
Acronym
ICCG-5
Dates
4-8 Jul 2004
Place
Saarbruecken (Germany)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.