Published May 1976
| Version v1
Journal article
Computer simulation of adsorption of Cu atoms on W(100) and W(110) surfaces
Description
The structures of the adsorbed layers for Cu/W(100) and Cu/W(110) are simulated by calculating the energetically most probable positions of Cu atoms in adlayers. This is achieved by minimizing the total energy of interaction among Cu atoms in the deposit, and between Cu atoms and the substrate atoms. It is found that the experimentally established orientations of adsorbed Cu atoms on W surfaces and their corresponding adsorption energies are reasonably well predicted. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Crystal Growth
- Journal Volume
- 33
- Journal Issue
- 2
- Series
- J. Cryst. Growth.
- Journal Page Range
- 212-214
- ISSN
- 0022-0248
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 7255049
- Subject category
- S36: MATERIALS SCIENCE; S99: GENERAL AND MISCELLANEOUS;
- Descriptors DEI
- ADSORPTION; ATOMS; COPPER; CRYSTAL LATTICES; CRYSTALS; LENNARD-JONES POTENTIAL; MILLER INDICES; POTENTIAL ENERGY; SIMULATION; SURFACES; TUNGSTEN
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; ENERGY; METALS; TRANSITION ELEMENTS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent