Published May 1976 | Version v1
Journal article

Computer simulation of adsorption of Cu atoms on W(100) and W(110) surfaces

  • 1. Middle East Technical Univ., Ankara (Turkey)

Description

The structures of the adsorbed layers for Cu/W(100) and Cu/W(110) are simulated by calculating the energetically most probable positions of Cu atoms in adlayers. This is achieved by minimizing the total energy of interaction among Cu atoms in the deposit, and between Cu atoms and the substrate atoms. It is found that the experimentally established orientations of adsorbed Cu atoms on W surfaces and their corresponding adsorption energies are reasonably well predicted. (Auth.)

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Crystal Growth
Journal Volume
33
Journal Issue
2
Series
J. Cryst. Growth.
Journal Page Range
212-214
ISSN
0022-0248

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
7255049
Subject category
S36: MATERIALS SCIENCE; S99: GENERAL AND MISCELLANEOUS;
Descriptors DEI
ADSORPTION; ATOMS; COPPER; CRYSTAL LATTICES; CRYSTALS; LENNARD-JONES POTENTIAL; MILLER INDICES; POTENTIAL ENERGY; SIMULATION; SURFACES; TUNGSTEN
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; ENERGY; METALS; TRANSITION ELEMENTS

Optional Information

Notes
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