Published May 2007
| Version v1
Journal article
The influence of ion-enhanced field emission on the high-frequency breakdown in microgaps
- 1. Institute of Physics, PO Box 57, Belgrade (Serbia)
- 2. Vinca Institute of Nuclear Sciences, PO Box 522, Belgrade (Serbia)
Description
This paper contains the results of the detailed simulation study of the role of ion-enhanced field emission on the breakdown voltage in argon, xenon and krypton at high frequencies. Calculations were performed by using a one-dimensional particle-in-cell/Monte Carlo collisions (PIC/MCC) code with the secondary emission model adjusted to include field emission effects in microgaps. The obtained simulation results clearly show that electrical breakdown across micron-size gaps may occur at voltages far below the minimum predicted by the conventional Paschen curve. The observed breakdown voltage reduction may be attributed to the onset of ion-enhanced field emission
Additional details
Identifiers
- DOI
- 10.1088/0963-0252/16/2/017;
- PII
- S0963-0252(07)20274-9;
Publishing Information
- Journal Title
- Plasma Sources Science and Technology
- Journal Volume
- 16
- Journal Issue
- 2
- Journal Page Range
- p. 337-340
- ISSN
- 0963-0252
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38069140
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ARGON; COMPUTERIZED SIMULATION; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; FIELD EMISSION; IONS; KRYPTON; MONTE CARLO METHOD; ONE-DIMENSIONAL CALCULATIONS; PASCHEN LAW; PLASMA SIMULATION; SECONDARY EMISSION; XENON
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; ELEMENTS; EMISSION; FLUIDS; GASES; NONMETALS; RARE GASES; SIMULATION