Studying the Effect of Doping and Radiation on the Optical Properties of ZnS Thin Films Prepared by Chemical Spray pyrolysis

In this paper thin films of (ZnS) have been prepared as pure and doped by Aluminum (AL) and Nickel (Ni) with same ratio (3%) and irradiated with gamma ray. The films were prepared by chemical spray pyrolysis form zinc chloride (ZnCl₂) with high purity and thiourea (CS(NH₂)₂) at substrate temperature (300C) on glass substrate with thickness(0.17mm). The optical properties were studied for range of wave length (190-1100nm) by(UV-VIS Double Beam Spectrometer). Also calculated the optical energy gap for electronic transition and showed it direct type with value equal to (3.1 eV) before doping and between(2.9-2.7)eV for doping films.These values depend on type of doping materials also. The value equals to(3.3 eV-ZnS-pure) after irradiation and between(2.9-3.1)eV for doping sample. Finally, the optical constants were calculated such as absorption coefficient (α), index coefficient(n) and extinction coefficient(k) for all samples