Published November 1, 2012 | Version v1
Journal article

Effects of strain on Goos-Hänchen-like shifts of graphene

  • 1. College of Electronics and Information, South-Central University for Nationalities, Wuhan 430074 (China)
  • 2. Faculty of Science, Shanxi University of Science and Technology, Xian 710021 (China)

Description

We have studied the Goos-Hänchen-like (GHL) shifts for massless Dirac electrons passing across a potential barrier in strained graphene. The analytical solutions of the transmission coefficient and the GHL shifts are obtained. The GHL shifts as the function of the strain tensor and direction, the incidence angle and the barrier's width are discussed. We also explore how critical angles change as the strain tensor and incidence electron energy change. Finally, we make a proposal of experimental measurement of the GHL shifts. The study of the GHL shifts will make for applications in graphene-based nano-electronics.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2012.07.011

Additional details

Identifiers

DOI
10.1016/j.physb.2012.07.011;
PII
S0921-4526(12)00685-0;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
21
Journal Page Range
p. 4254-4257
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44041545
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANALYTICAL SOLUTION; FUNCTIONS; INCIDENCE ANGLE; POTENTIALS; PROPOSALS; STRAINS; TENSORS; TRANSMISSION; TUNNEL EFFECT; WIDTH
Descriptors DEC
DIMENSIONS; MATHEMATICAL SOLUTIONS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.