Defect control of local electric fields in inhomogeneous media
Creators
- 1. Pacific Northwest Lab., Richland, WA (United States)
- 2. East Texas State Univ., Commerce, TX (United States)
Description
The interaction of surface and bulk defects in dielectric media can lead to marked variations in the local electric field from the macroscopic value. Inherent to fabrication processes, these defects impose complex boundary conditions which prevent analytical solutions for the electric fields. To approach this problem, a self-consistent, numerical method to determine the local electric field in inhomogeneous media has been developed. Previous work has shown that microstructural defects tend to focus and enhance the local field vectors, which serve to effectively map the microstructure of dielectric media. In this paper, the authors report on field enhancement factors resulting from the orientation of these defects with respect to an applied field, and the effect of inclusions characterized by low dielectric constants. Results will contrast the direct determination of the local field with EMA and random resistor models to demonstrate their characteristic differences
Additional details
Publishing Information
- Publisher
- University of Florida.
- Imprint Place
- St. Augustine, FL (United States)
- Imprint Title
- Thirty-fifth Sanibel symposium
- Imprint Pagination
- 335 p.
- Journal Page Range
- p. 1, Paper 5.
Conference
- Title
- 35. Sanibel symposium on atomic, molecular, and condensed matter theory, computational methods, and the application of fundamental theory to problems of biology and pharmacology.
- Dates
- 25 Feb - 4 Mar 1995.
- Place
- St. Augustine, FL (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27018367
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DIELECTRIC MATERIALS; ELECTRIC FIELDS; INHOMOGENEOUS FIELDS
- Descriptors DEC
- CRYSTAL STRUCTURE; MATERIALS
Optional Information
- Secondary number(s)
- CONF-950231--.