Published April 2008 | Version v1
Journal article Metadata-only

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10μm

Creators

  • 1. Laboratory of Polar Materials and Devices and Department of Electronic Engineering, School of Information Science and Technology, East China Normal University, Shanghai 200241 (China)
  • 2. National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093 (China)

Description

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/25/4/042

Additional details

Identifiers

DOI
10.1088/0256-307X/25/4/042;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
25
Journal Issue
4
Journal Page Range
p. 1317-1320
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44112801
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION; DIELECTRIC MATERIALS; ELECTROMAGNETIC RADIATION; ETCHING; INCIDENCE ANGLE; INFRARED SPECTRA; OXIDATION; POROUS MATERIALS; PULSES; SENSORS; SILICON; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS
Descriptors DEC
CHEMICAL REACTIONS; ELEMENTS; MATERIALS; RADIATIONS; SEMIMETALS; SORPTION; SPECTRA; SURFACE FINISHING; TEMPERATURE RANGE