Published November 1, 2012 | Version v1
Journal article

Surface plasmon resonance investigation procedure as a structure sensitive method for SnO2 nanofilms

  • 1. Odessa I.I. Mechnikov National University, 2 Dvoryanska St., 65082 Odessa (Ukraine)
  • 2. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Prospect, 03028 Kiev (Ukraine)
  • 3. Akdeniz University, Department of Physics, Faculty of Science, Antalya (Turkey)

Description

General principles of the surface plasmon resonance (SPR) phenomenon are applied to studying the structure and physical properties of thin conducting tin dioxide (SnO2) films. The SPR effects are detected and investigated by the methods of polarization modulation of the incident electromagnetic radiation. Angular and spectral dependencies of the reflection coefficients Rs2 and Rp2 for the s- and p-polarized radiation, together with their polarization difference ρ = Rs2 − Rp2 are measured in the wavelength range of 400–1600 nm. Experimentally obtained ρ(θ, λ) characteristics reflect the peculiar optical properties associated with the film structure and morphology. Surface plasmon–polaritons and local plasmons excited by s- and p-polarized radiation were observed. The results confirm that the SPR technique is a sensitive and informative method for the analysis of the SnO2 film structure. - Highlights: ► Polarimetric technique for surface plasmon resonance was applied to SnO2 films. ► Principle optical parameter of the film ρ(θ, λ) was measured. ► ρ(θ, λ) = Rs2 − Rp2 — reflection coefficient difference ► It was established that ρ(θ, λ) is associated with SnO2 films' structure. ► ρ(θ, λ) amplitude is reported to be dependent on precursor concentration.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2012.08.054

Additional details

Identifiers

DOI
10.1016/j.tsf.2012.08.054;
PII
S0040-6090(12)01115-7;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
522
Journal Page Range
p. 452-456
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Engineering of wide bandgap semiconductor materials for energy saving
Acronym
E-MRS 2011 Symposium Q
Dates
9-10 May 2011
Place
Nice (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44103732
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTROMAGNETIC RADIATION; MODULATION; MORPHOLOGY; OPTICAL PROPERTIES; PLASMONS; POLARIZATION; PRECURSOR; RESONANCE; SURFACES; THIN FILMS; TIN OXIDES
Descriptors DEC
CHALCOGENIDES; FILMS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES; RADIATIONS; TIN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.