Influence of implantation doses of phosphorus to a lifetime τ in p-Si

The influence of case doses of an implantation in a range 1*1011-5*1015 sm-2 on low frequency current hums (LFCH) in thin ion-doped stratums of p-silicon, implantation by ions of phosphorus with energy 100 keV without heat treatment of slices was researched. For frequencies there are less than 2500 Hz at all exposure doses LFCH close to hum such as 1/fγ, and the metric γ smoothly varies from 1,15 up to 2,13. Changes of a metric γ can to be explained by model of the Lorentz for weakly interacting defect levels. With increase γ the time τi of relaxational processes increases also. The dependence LFCH and factor βs from case doses of an implantation was researched in a frequency range 40-2500 Hz and represented, in particular, at frequency 170 Hz. With rise of case doses of an implantation (from a case dose 1014 sm-2) LFCH is augmented by the order, and the factor βs (about 10-12) practically is constant on all case doses a range (1011 - 5*1015 sm-2 )