Published June 8, 2015 | Version v1
Journal article Metadata-only

Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

Creators

  • 1. LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

Description

We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors

Additional details

Identifiers

DOI
10.1063/1.4922290;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
23
Journal Page Range
p. 232402-232402.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46118418
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC CONTACTS; ENERGY DEPENDENCE; GALLIUM ARSENIDES; GERMANIUM; HALL EFFECT; LAYERS; PHOTONS; PLATINUM; SEMICONDUCTOR MATERIALS; SIMULATION; SPIN
Descriptors DEC
ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; BOSONS; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; MASSLESS PARTICLES; MATERIALS; METALS; PARTICLE PROPERTIES; PLATINUM METALS; PNICTIDES; TRANSITION ELEMENTS

Optional Information

Notes
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