Published December 1988
| Version v1
Journal article
Behaviour of arsenic in ion-doped silicon layer under heating by electron beam of second duration
- 1. AN SSSR, Tomsk (USSR). Inst. Sil'notochnoj Ehlektroniki
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Поведение мышьяка в ионно-легированном слое кремния при нагреве электронным пучком секундной длительности
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 22
- Journal Issue
- 12
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2245
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20062276
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ARSENIC ADDITIONS; ARSENIC IONS; ELECTRON BEAMS; ION IMPLANTATION; KEV RANGE 01-10; KEV RANGE 10-100; MONOCRYSTALS; SILICON; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHARGED PARTICLES; CRYSTALS; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LEPTON BEAMS; PARTICLE BEAMS; SEMIMETALS
Optional Information
- Notes
- Short note.