Electronic properties of ion implanted polymer films
Description
The authors have implanted a number of insulating polymer (PET) thick films with fluences in the range 1 x 1013 to 5 x 1017 ions/cm2 in order to induce electronic activity. Finite electrical conductivities were obtained for fluences as low as 3 x 1015 ions/cm2. The resistivity for these implanted materials increases with decreasing temperature demonstrating highly disordered or semiconducting behavior. Hall effect measurements confirm this result and indicate negatively charged carriers with a carrier density of 1.44 x 1017 cm-3 for an important dose of 1 x 1017 ions/cm2. The conductivities also seem to be dependent on the implanted ion species. They believe this material will be useful as an accurate temperature sensor near room temperature. 10 refs., 4 figs
Additional details
Publishing Information
- Imprint Title
- Ion beam processing of advanced electronic materials
- Imprint Pagination
- 393 p.
- Journal Page Range
- (Paper 53) p. 8.
- Report number
- CONF-8904275--
Conference
- Title
- Symposium on ion beam processing of advanced electronic materials.
- Dates
- 25-27 Apr 1989.
- Place
- San Diego, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21049269
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ARGON IONS; BORON IONS; CARRIER DENSITY; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; FILMS; HALL EFFECT; ION IMPLANTATION; POLYMERS; TEMPERATURE DEPENDENCE; USES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DATA; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES