Published 1989 | Version v1
Report

Electronic properties of ion implanted polymer films

  • 1. Missouri State Univ., Springfield (USA)

Description

The authors have implanted a number of insulating polymer (PET) thick films with fluences in the range 1 x 1013 to 5 x 1017 ions/cm2 in order to induce electronic activity. Finite electrical conductivities were obtained for fluences as low as 3 x 1015 ions/cm2. The resistivity for these implanted materials increases with decreasing temperature demonstrating highly disordered or semiconducting behavior. Hall effect measurements confirm this result and indicate negatively charged carriers with a carrier density of 1.44 x 1017 cm-3 for an important dose of 1 x 1017 ions/cm2. The conductivities also seem to be dependent on the implanted ion species. They believe this material will be useful as an accurate temperature sensor near room temperature. 10 refs., 4 figs

Additional details

Publishing Information

Imprint Title
Ion beam processing of advanced electronic materials
Imprint Pagination
393 p.
Journal Page Range
(Paper 53) p. 8.
Report number
CONF-8904275--

Conference

Title
Symposium on ion beam processing of advanced electronic materials.
Dates
25-27 Apr 1989.
Place
San Diego, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21049269
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ARGON IONS; BORON IONS; CARRIER DENSITY; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; FILMS; HALL EFFECT; ION IMPLANTATION; POLYMERS; TEMPERATURE DEPENDENCE; USES
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; DATA; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES