Published September 1987
| Version v1
Journal article
Epitaxial growth of CdTe on InSb(100) by RF sputtering
- 1. Hiroshima Univ. (Japan). Faculty of Engineering
Description
Cadmium telluride is deposited epitaxially by rf sputtering on the clean surface of InSb(100) substrate from which the surface native oxide has been etched off in advance by H2 plasma treatment. The crystalline quality of CdTe films which depends on the substrate temperature is evaluated by means of the optical reflectance, Raman scattering and RHEED pattern measurements. CdTe films prepared at temperatures of 250-300deg C are deposited epitaxially, but those at 100deg C are not. (author)
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 2
- Journal Volume
- 26
- Journal Issue
- 9
- Series
- Jpn. J. Appl. Phys., Part 2.
- Journal Page Range
- L1437-L1439
- ISSN
- 0021-4922
- CODEN
- JAPLD
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 19038028
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONIDES; CADMIUM TELLURIDES; CRYSTAL GROWTH; ELECTRON DIFFRACTION; EPITAXY; HYDROGEN; INDIUM IONS; MONOCRYSTALS; PLASMA; SPUTTERING
- Descriptors DEC
- ANTIMONY COMPOUNDS; ATOMIC IONS; CADMIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELEMENTS; IONS; NONMETALS; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS