Diffuse X-ray scattering from neutron-irradiated silicon doped with boron

The diffuse X-ray scattering and lattice parameter change of silicon crystals heavily doped with boron after electron and neutron irradiation are measured. From a comparison of unirradiated and electron-irradiated samples the volume change is determined of substitutional boron Q/sub B/ = -(2.2 +- 0.2) x 10-2 nm3 and of boron with a trapped interstitial Q/sub BI/ = (0 +- 0.5) x 10-2 nm3. During neutron irradiation of the doped samples each boron stabilizes an additional Frenkel pair by trapping of the interstitial. The concentration of the untrapped interstitials remains the same as in the undoped sample, but the nucleation of interstitial clusters is enhanced thus reducing the cluster size to 93% of the value of undoped samples. (author)