Published December 1990
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The hot phonon spot in the film
Description
The possibility of hot phonon spot (HPS) formation and the further study of dynamics of HPS development at the excitation of phonon system as a result of cooling down of the photoexcited current carriers in the semiconductor films are discussed. The adequately defective and thick films are considered. It is assumed that the loss of energy via boundaries may be neglected and the density of states of excited phonons through the depth of film will be uniform. (author). 3 refs, 2 figs, 3 tabs
Availability note (English)
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Additional details
Publishing Information
- Imprint Pagination
- 23 p.
- Report number
- IC--90/462
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 22086817
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIFFUSION; ENERGY-LEVEL DENSITY; FILMS; PHONONS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; QUASI PARTICLES