Published December 1990 | Version v1
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The hot phonon spot in the film

Description

The possibility of hot phonon spot (HPS) formation and the further study of dynamics of HPS development at the excitation of phonon system as a result of cooling down of the photoexcited current carriers in the semiconductor films are discussed. The adequately defective and thick films are considered. It is assumed that the loss of energy via boundaries may be neglected and the density of states of excited phonons through the depth of film will be uniform. (author). 3 refs, 2 figs, 3 tabs

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
23 p.
Report number
IC--90/462

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
22086817
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIFFUSION; ENERGY-LEVEL DENSITY; FILMS; PHONONS; SEMICONDUCTOR MATERIALS
Descriptors DEC
MATERIALS; QUASI PARTICLES